CTLM8110-M832D multi discrete module ? surface mount p-channel enhancement-mode silicon mosfet and low v f silicon schottky rectifier description: the central semiconductor ctlm8110- m832d consists of an p-channel enhancement-mode mosfet and a low v f schottky rectifier. packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. marking code: cfr maximum ratings - case: (t a =25c) symbol units power dissipation (note 1) p d 1.65 w operating and storage junction temperature t j, t stg -65 to +150 c thermal resistance ja 76 c/w maximum ratings - q1: (t a =25c) drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state) i d 0.86 a continuous drain current, tp<5.0s i d 0.95 a continuous source current (body diode) i s 0.36 a maximum pulsed drain current, tp=10s i dm 4.0 a maximum pulsed source current, tp=10s i sm 4.0 a maximum ratings - d1: (t a =25c) peak repetitive reverse voltage v rrm 40 v continuous forward current i f 1.0 a peak repetitive forward current, tp<1.0ms i frm 3.5 a peak forward surge current, tp=8.0ms i fsm 10 a electrical characteristics - q1: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =8.0v, v ds =0 1.0 50 na i dss v ds =20v, v gs =0 5.0 500 na bv dss v gs =0, i d =250a 20 24 v v gs(th) v ds =v gs , i d =250a 0.45 0.76 1.0 v v sd v gs =0, i s =360ma 0.9 v r ds(on) v gs =4.5v, i d =0.95a 0.085 0.15 r ds(on) v gs =4.5v, i d =0.77a 0.085 0.142 r ds(on) v gs =2.5v, i d =0.67a 0.13 0.2 r ds(on) v gs =1.8v, i d =0.2a 0.19 0.24 g fs v ds =10v, i d =0.81a 2.0 s applications ? load power switches ? dc - dc converters ? lcd backlighting ? battery powered portable devices including cell phones, digital cameras, pagers, pdas, notebook pcs, etc. features ? dual chip device ? high current (0.95a) mosfet and 1.0a schottky rectifier ? low r ds(on) : 0.24 max @ v gs =1.8v ? low v f schottky rectifier (550mv @ 1.0a max) ? small tlm 3x2mm leadless surface mount package ? complementary device: ctlm7110-m832d notes: (1) fr-4 epoxy pcb with copper mounting pad area of 54mm 2 . tlm832d case r2 (2-august 2011) www.centralsemi.com ? device is halogen free by design
CTLM8110-M832D multi discrete module ? surface mount p-channel enhancement-mode silicon mosfet and low v f silicon schottky rectifier electrical characteristics - q1 - continued: (t a =25c) symbol test conditions min typ max units q g(tot) v ds =10v, v gs =4.5v, i d =1.0a 3.56 nc q gs v ds =10v, v gs =4.5v, i d =1.0a 0.36 nc q gd v ds =10v, v gs =4.5v, i d =1.0a 1.52 nc c rss v ds =16v, v gs =0, f=1.0mhz 80 pf c iss v ds =16v, v gs =0, f=1.0mhz 200 pf c oss v ds =16v, v gs =0, f=1.0mhz 60 pf t on v dd =10v, v gs =4.5v, i d =0.95a, r g =6.0 20 ns t off v dd =10v, v gs =4.5v, i d =0.95a, r g =6.0 25 ns electrical characteristics - d1: (t a =25c) symbol test conditions min typ max units i r v r =5.0v 10 a i r v r =8.0v 20 a i r v r =15v 50 a bv r i r =100a 40 v v f i f =10ma 0.29 v v f i f =100ma 0.36 v v f i f =500ma 0.45 v v f i f =1.0a 0.55 v c j v r =4.0v, f=1.0mhz 50 pf tlm832d case - mechanical outline suggested mounting pads for maximum power dissipation (dimensions in mm) for standard mounting refer to tlm832d package details lead code: 1) gate q1 2) source q1 3) anode d1 4) anode d1 5) cathode d1 6) cathode d1 7) drain q1 8) drain q1 marking code: cfr pin configuration * note: - exposed pad p1 common to pins 7 and 8 - exposed pad p2 common to pins 5 and 6 www.centralsemi.com r2 (2-august 2011)
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